Yaadannoo boqonnaa fi gaaffii shaakalaa

Boqonnaa 5 Fiizikii kutaa 12: Bu'uuraalee Elektirooniksii

Wanti fuula kana irra jiru hundi boqonnaa 5 kitaaba Fiizikii kutaa 12 tiif: wanta boqonnaan haguugu, yaadannoo gabaabaa, gaaffii shaakalaa deebii isaanii waliin, fi viidiyoo barnootaa bakka jirutti.

5
Kaardii: 10
Gaaffii shaakalaa boqonnaa 5

Boqonnaan 5 maal haguuga

1.Semiconductors
2.Diodes and their Functions
3.Rectification
4.Transistors and their application
5.Integrated Circuits
6.Logic gates and logic circuits
7.Application of electronics

Yaadannoo gabaabaa boqonnaa 5

Kaardiiwwan fuula Fiizikii kutaa 12 irratti boqonnaa kana jala galmaa'an. Tokko tokkoon bani.

Gosa Siimikondaktarii AlaaGabatee wabiiN-type · P-type

Gosa	Garee dopant	Fakkeenya dopant	Baattuu baay'ee	Baattuu xiqqaataa
N-type	Group V (pentavalent)	As, P, Sb, Bi	Electrons	Holes
P-type	Group III (trivalent)	B, Al, Ga, In	Holes	Electrons

Yoom akka itti fayyadamtu

Siimikondaktaroota N-type fi P-type, xuraawaa isaanii fi baattuu chaarjii isaanii addaan baasuuf itti fayyadami.

Of eeggadhu

Baattuun tokko isa kaan irra baay'atus, siimikondaktaroonni dooppii ta'an waliigalatti chaarjii dhabeeyyii dha.

Grade 12 Physics, fuula 143 irraa eegalee irraa qophaa'e; osoo hin ba'in dura yeroo lama mirkanaa'e

Cuunfaa Geetota LoojikiiGabatee wabiiOR · AND · NOT · +2

Geetii	Hojii loojikii	Bu'aan 1 kan ta'u	Geetii waliigalaa
OR	Ida'uu: $y = A + B$	Yoo xiqqaate input tokko 1 yoo ta'e	Lakki
AND	Baay'isuu: $y = A \cdot B$	Input hundi 1 yoo ta'an	Lakki
NOT	Inversion: input qeenxee	Input 0 yoo ta'e	Lakki
NOR	Inverted OR	Input hundi 0 yoo ta'an	Eeyyee
NAND	Inverted AND	Yoo xiqqaate input tokko 0 yoo ta'e	Eeyyee

Yoom akka itti fayyadamtu

Dalagaalee loojikii Buuliyaanii fi bu'aawwan sarkiyuutii dijiitaalaa beekuuf itti fayyadami.

Of eeggadhu

Ida'ama loojikii Buuliyaanii keessatti 1 + 1 bu'aan isaa 1 ta'a malee herreega akka 2 miti.

Grade 12 Physics, fuula 143 irraa eegalee irraa qophaa'e; osoo hin ba'in dura yeroo lama mirkanaa'e

Haala Biasing TiraanzaayitaraaDogoggora baratame

Yoom akka itti fayyadamtu

Hojii guddiftuu sirriitiif voolteejiiwwan walqabsiisa tiraanzaayitaraa irratti barbaachisan murteessuuf itti fayyadami.

Of eeggadhu

Walqabsiisni emitter fi base forward biased ta'uu qaba, walqabsiisni collector fi base immoo reverse biased ta'uu qaba. Lamaan isaanii iyyuu forward gochuun dogoggora.

Grade 12 Physics, fuula 143 irraa eegalee irraa qophaa'e; osoo hin ba'in dura yeroo lama mirkanaa'e

Yaatoo Tiraanzaayitaraa fi Argannoo YaatooFoormulaa

\beta = \frac{I_C}{I_B},\quad I_E = I_B + I_C

\beta = \frac{I_C}{I_B},\quad I_E = I_B + I_C

$\beta$: Argannoo yaatoo $dimensionless$
$I_C$: Yaatoo collector $A$
$I_B$: Yaatoo base $A$
$I_E$: Yaatoo emitter $A$

Yoom akka itti fayyadamtu

Tiraanzaayitara baayipoolarii keessatti yaatoowwan sararaa yookiin guddina yaatoo common-emitter herreguuf itti fayyadami.

Of eeggadhu

Yaatoon base maayikiroo-aampeeriin kennama, yaatoon collector fi emitter immoo miilii-aampeeriin kennama. Osoo hin herregin dura hunda gara aampeeriitti jijjiiri.

Grade 12 Physics, fuula 143 irraa eegalee irraa qophaa'e; osoo hin ba'in dura yeroo lama mirkanaa'e

Walbira Qabaa Kutaalee TiraanzaayitaraaGabatee wabiiEmitter · Base · Collector

Kutaa	Sadarkaa dooppiingii	Hamma qaamaa	Hojii
Emitter	Baay'ee doped kan ta'e	Hamma giddu galeessaa	Charge carriers dhiyeessa
Base	Xiqqummaa doped kan ta'e	Baay'ee haphii	Carriers gara collector tti dabarsa
Collector	Giddu galeessaan doped kan ta'e	Hamma isa guddaa	Charge carriers walitti qaba

Yoom akka itti fayyadamtu

Sadarkaa dooppiingii, hamma qaamaa fi hojii kutaalee sadan tiraanzaayitara baayipoolarii walbira qabuuf itti fayyadami.

Of eeggadhu

Kutaan base haphii fi dooppiingii xiqqaataa kan qabu yoo ta'u, collector immoo hamma qaamaan isa guddaa dha.

Grade 12 Physics, fuula 143 irraa eegalee irraa qophaa'e; osoo hin ba'in dura yeroo lama mirkanaa'e

Gaaffii shaakalaa boqonnaa 5

Gaaffii filannoo 10 boqonnaa kana irratti barreeffaman, tokkoon tokkoon isaanii deebii fi sababa qabu. Deebii banuu dura yaali. Gaaffiin kun Ingiliffaa tiin.

Gaaffii 1

How does a pure semiconductor behave at absolute zero temperature (0 K)?

A.As a superconductor
B.As an insulator
C.As a good conductor
D.As a magnetic material

Deebii fi sababa agarsiisi

Deebii: B As an insulator

Sababa

At absolute zero (0 K), a semiconductor acts as an insulator because valence electrons remain tightly held in their covalent bonds and cannot move freely.

Gaaffii 2

Which of the following Group III elements is added to pure silicon to create a P-type semiconductor?

A.Arsenic
B.Phosphorus
C.Boron
D.Antimony

Deebii fi sababa agarsiisi

Deebii: C Boron

Sababa

Boron is a Group III element with three valence electrons. Adding it creates holes, which makes a P-type semiconductor.

Gaaffii 3

What is the approximate barrier potential across a silicon P-N junction diode?

A.0.3 V
B.0.7 V
C.1.5 V
D.5.0 V

Deebii fi sababa agarsiisi

Deebii: B 0.7 V

Sababa

The barrier potential of a P-N junction depends on the material; it is approximately 0.7 V for silicon and 0.3 V for germanium.

Gaaffii 4

In a bipolar junction transistor, which section is lightly doped and very thin?

A.Emitter
B.Collector
C.Base
D.Anode

Deebii fi sababa agarsiisi

Deebii: C Base

Sababa

The base is the middle layer that is lightly doped and very thin compared to the emitter and collector.

Gaaffii 5

A student in Hawassa tests a transistor circuit. The base current is I_B = 0.05 mA and the collector current is I_C = 4.95 mA. What is the emitter current I_E?

A.4.90 mA
B.5.00 mA
C.0.05 mA
D.99.0 mA

Deebii fi sababa agarsiisi

Deebii: B 5.00 mA

Sababa

The emitter current is the sum of the base current and collector current: I_E = I_B + I_C = 0.05 mA + 4.95 mA = 5.00 mA.

Gaaffii 6

What happens to the depletion region when a P-N junction diode is forward biased?

A.It becomes very thin and narrow, allowing high current to flow.
B.It becomes wider, blocking all current flow.
C.It remains unchanged while the barrier voltage doubles.
D.It fills with positive ions on the P-side only.

Deebii fi sababa agarsiisi

Deebii: A It becomes very thin and narrow, allowing high current to flow.

Sababa

In forward bias, charges are repelled toward the junction, making the depletion region very thin and creating a low-resistance path for electric current.

Gaaffii 7

In a basic full-wave bridge rectifier circuit containing four diodes (D1 to D4), how many diodes conduct current during each half-cycle of the AC supply?

A.Only one diode
B.Only two diodes
C.Three diodes
D.All four diodes

Deebii fi sababa agarsiisi

Deebii: B Only two diodes

Sababa

During each half-cycle of an AC signal, two diodes conduct in series while the other two diodes are reverse biased and switch off.

Gaaffii 8

An integrated circuit (IC), invented by Jack Kilby and Robert Noyce, combines which four components on a small semiconductor chip?

A.Diodes, transistors, resistors, and capacitors
B.Diodes, transformers, inductors, and batteries
C.Transistors, electric motors, switches, and cells
D.Resistors, capacitors, generators, and coils

Deebii fi sababa agarsiisi

Deebii: A Diodes, transistors, resistors, and capacitors

Sababa

An integrated circuit consists of diodes, transistors, resistors, and capacitors formed together on a single small piece of semiconductor material.

Gaaffii 9

A technician in Addis Ababa measures a common-emitter transistor amplifier with a current gain of β = 100 and a collector current of I_C = 10 mA. What is the emitter current I_E?

A.0.1 mA
B.9.9 mA
C.10.1 mA
D.1000 mA

Deebii fi sababa agarsiisi

Deebii: C 10.1 mA

Sababa

First calculate the base current: I_B = I_C / β = 10 mA / 100 = 0.1 mA. Then calculate the emitter current: I_E = I_B + I_C = 0.1 mA + 10 mA = 10.1 mA.

Gaaffii 10

Which transistor configuration provides both current gain and voltage gain, making it the most commonly used circuit arrangement?

A.Common-base (CB)
B.Common-collector (CC)
C.Common-emitter (CE)
D.Common-gate (CG)

Deebii fi sababa agarsiisi

Deebii: C Common-emitter (CE)

Sababa

The common-emitter (CE) configuration provides both current and voltage gain, giving high overall power gain.

Appiin boqonnaa kana irratti gaaffii 12 qaba; utuu hojjettuu ni sirreessa. Kan asii jiran 10 jalqabaa ti.

Fuula kitaabaa boqonnaa 5

Kitaaba barataa Fiizikii kutaa 12 guutuu, PDF bilisaan.

Maxxansa Ministeera Barnootaa, Ingiliffaa, Fuula 186

PDF buufadhaa

Yaadannoo gabaabaa Fiizikii kutaa 12 hunda

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